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 16TTS16SPBF High Voltage Series
Vishay High Power Products
Surface Mountable Phase Control SCR, 16 A
DESCRIPTION/FEATURES
2 Anode
D2PAK
1 Cathode
3 Gate
The 16TTS16SPBF High Voltage Series of silicon Available controlled rectifiers are specifically designed RoHS* for medium power switching and phase control COMPLIANT applications. The glass passivation technology used has reliable operation up to 125 C junction temperature. Typical applications are in input rectification (soft start) and these products are designed to be used with Vishay HPP input diodes, switches and output rectifiers which are available in identical package outlines. This product has been designed and qualified for industrial level and lead (Pb)-free ("PbF" suffix).
PRODUCT SUMMARY
VT at 10 A ITSM VRRM < 1.4 V 200 A 1600 V
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS NEMA FR-4 or G-10 glass fabric-based epoxy with 4 oz. (140 m) copper Aluminum IMS, RthCA = 15 C/W Aluminum IMS with heatsink, RthCA = 5 C/W Note * TA = 55 C, TJ = 125 C, footprint 300 mm2 SINGLE-PHASE BRIDGE 2.5 6.3 14.0 THREE-PHASE BRIDGE 3.5 9.5 18.5 A UNITS
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL IT(AV) IRMS VRRM/VDRM ITSM VT dV/dt dI/dt TJ 10 A, TJ = 25 C CHARACTERISTICS Sinusoidal waveform VALUES 10 16 1600 200 1.4 500 150 - 40 to 125 UNITS A V A V V/s A/s C
VOLTAGE RATINGS
PART NUMBER VRRM, MAXIMUM PEAK REVERSE VOLTAGE V 1600 VDRM, MAXIMUM PEAK DIRECT VOLTAGE V 1600 IRRM/IDRM AT 125 C mA 10
16TTS16SPBF
* Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 94590 Revision: 04-Jul-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 1
16TTS16SPBF High Voltage Series
Vishay High Power Products Surface Mountable Phase
Control SCR, 16 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER Maximum average on-state current Maximum RMS on-state current Maximum peak, one-cycle, non-repetitive surge current Maximum I2t for fusing Maximum I2t for fusing Maximum on-state voltage drop On-state slope resistance Threshold voltage Maximum reverse and direct leakage current Holding current Maximum latching current Maximum rate of rise of off-state voltage Maximum rate of rise of turned-on current SYMBOL IT(AV) IRMS ITSM I2 t I2t VTM rt VT(TO) IRM/IDM IH IL dV/dt dI/dt 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied t = 0.1 to 10 ms, no voltage reapplied 16 A, TJ = 25 C TJ = 125 C TJ = 25 C TJ = 125 C TEST CONDITIONS TC = 93 C, 180 conduction, half sine wave VALUES TYP. MAX. 10 16 170 200 144 200 2000 1.4 24.0 1.1 VR = Rated VRRM/VDRM 100 200 500 150 V/s A/s 0.5 10 150 mA A2s A2s V m V A UNITS
Anode supply = 6 V, resistive load, initial IT = 1 A Anode supply = 6 V, resistive load
TRIGGERING
PARAMETER Maximum peak gate power Maximum average gate power Maximum peak positive gate current Maximum peak negative gate voltage SYMBOL PGM PG(AV) + IGM - VGM Anode supply = 6 V, resistive load, TJ = - 10 C Maximum required DC gate current to trigger IGT Anode supply = 6 V, resistive load, TJ = 25 C Anode supply = 6 V, resistive load, TJ = 125 C Anode supply = 6 V, resistive load, TJ = - 10 C Maximum required DC gate voltage to trigger Maximum DC gate voltage not to trigger Maximum DC gate current not to trigger VGT Anode supply = 6 V, resistive load, TJ = 25 C Anode supply = 6 V, resistive load, TJ = 125 C VGD IGD TJ = 125 C, VDRM = Rated value TEST CONDITIONS VALUES 8.0 2.0 1.5 10 90 60 35 3.0 2.0 1.0 0.25 2.0 mA V mA UNITS W A V
SWITCHING
PARAMETER Typical turn-on time Typical reverse recovery time Typical turn-off time SYMBOL tgt trr tq TJ = 25 C TJ = 125 C TEST CONDITIONS VALUES 0.9 4 110 s UNITS
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For technical questions, contact: diodes-tech@vishay.com
Document Number: 94590 Revision: 04-Jul-08
16TTS16SPBF High Voltage Series
Surface Mountable Phase Control SCR, 16 A
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER Maximum junction and storage temperature range Soldering temperature Maximum thermal resistance, junction to case Typical thermal resistance, junction to ambient Approximate weight Marking device Case style D2PAK (SMD-220) SYMBOL TJ, TStg TS RthJC RthJA For 10 s (1.6 mm from case) DC operation PCB mount (1) TEST CONDITIONS VALUES - 40 to 125 240 1.3 C/W 40 2 0.07 16TTS16S g oz. UNITS C
Vishay High Power Products
Note (1) When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 m) copper 40 C/W. For recommended footprint and soldering techniques refer to application note #AN-994.
Document Number: 94590 Revision: 04-Jul-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com 3
16TTS16SPBF High Voltage Series
Vishay High Power Products Surface Mountable Phase
Control SCR, 16 A
Max imum Average On-state Power Loss (W)
125 Maximum Allowable Case Temperature (C) 120 115 110 105 100 95 90 0 2
16TTS.. Series R thJC (DC) = 1.3 C/W
25 DC 180 120 90 60 30
20
Conduction Angle
15
RMS Limit 10
Conduction Period
30 60 90 120 180 4 6 8 10 12
5
16TTS.. Series TJ = 125C 0 2 4 6 8 10 12 14 16 18
0 Average On-state Current (A)
Average On-state Current (A)
Fig. 1 - Current Rating Characteristics
Fig. 4 - On-State Power Loss Characteristics
Peak Half Sine Wave On-state Current (A)
125 Maximum Allowable Case Temperature (C) 120 115
Conduction Period
16TTS.. Series R thJC (DC) = 1.3 C/W
180
160
At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s
110 105 100 95 90 0 2 4 6 8 10 12 14 16 Average On-state Current (A) 30
140
120
60 90 120 180 DC
100 16TTS..Series 80 1 10 100
Number Of Equal Amplitude Half C ycle Current Pulses (N)
Fig. 2 - Current Rating Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Max imum Average On-state Power Loss (W)
16 14 12 10 8 6 4 2 0 0
180 120 90 60 30 RMS Limit
Peak Half Sine Wave Forward Current (A)
18
200 180 160 140 120 100
Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Initial TJ = 125C No Voltage Reapplied Rated V RRM Reapplied
Conduction Angle
16TTS.. Series T J = 125C
16TTS.. Series
1
2
3
4
5
6
7
8
9
10 11
80 0.01
0.1 Pulse Train Duration (s)
1
Average On-state Current (A)
Fig. 3 - On-State Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
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For technical questions, contact: diodes-tech@vishay.com
Document Number: 94590 Revision: 04-Jul-08
16TTS16SPBF High Voltage Series
Surface Mountable Phase Control SCR, 16 A
1000 16TTS.. Series Instantaneous On-state Current (A)
Vishay High Power Products
100
10 T
J
= 25C
TJ = 125C 1 0 1 2 3 4 5 Instantaneous On-st ate Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
Transient Thermal Impedance Z thJC (C/W)
10 Steady State Value (DC Operation)
1
D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 Single Pulse 16TTS.. Series
0.1
0.01 0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristics
100
Instantaneous Gate Voltage (V)
Rectangular gate pulse a)Recommended load line for rated di/dt: 10 V, 20 ohms tr = 0.5 s, tp >= 6 s b)Recommended load line for <= 30% rated di/dt: 10 V, 65 ohms 10 tr = 1 s, tp >= 6 s
(1) PGM = 40 , tp = 1 ms (2) PGM = 20 W, tp = 2 ms (3) PGM = 8 W, tp = 5 ms (4) PGM = 4 W, tp = 10 ms
(a)
(b)
TJ = -10 C TJ = 25 C
TJ = 125 C
1 VGD IGD 0.1 0.001 0.01
(4)
(3)
(2)
(1)
16TTS.. Series 0.1 1
Frequency Limited by PG(AV) 10 100
Instantaneous Gate Current (A)
Fig. 9 - Gate Characteristics
Document Number: 94590 Revision: 04-Jul-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com 5
16TTS16SPBF High Voltage Series
Vishay High Power Products Surface Mountable Phase
Control SCR, 16 A
ORDERING INFORMATION TABLE
Device code
16
1
1 2 3 4 5 6 7
T
2 -
T
3
S
4
16
5
S
6
TRL PbF
7 8
Current rating Circuit configuration: T = Single thyristor Package: T = TO-220AC Type of silicon: S = Standard recovery rectifier Voltage rating: Voltage code x 100 = VRRM (16 = 1600 V) S = TO-220 D2PAK (SMD-220) version None = Tube TRL = Tape and reel (left oriented) TRR = Tape and reel (right oriented)
8
-
None = Standard production PbF = Lead (Pb)-free
LINKS TO RELATED DOCUMENTS Dimensions Part marking information Packaging information http://www.vishay.com/doc?95046 http://www.vishay.com/doc?95054 http://www.vishay.com/doc?95032
www.vishay.com 6
For technical questions, contact: diodes-tech@vishay.com
Document Number: 94590 Revision: 04-Jul-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
www.vishay.com 1


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